Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market Size, Share, Growth and Industry analysis, By Type (Silicon Carbide Power Semiconductor, Gallium Nitride Power Semiconductor), By Application (Consumer Electronics, New Energy Grid Connection, Rail, Industrial Motor, Ups Power Supply, New Energy Vehicles, Other) and Regional Forecast to 2034

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GALLIUM NITRIDE (GAN) AND SILICON CARBIDE (SIC) POWER SEMICONDUCTORS MARKET OVERVIEW

The global gallium nitride (gan) and silicon carbide (sic) power semiconductors market size was valued at USD 2.575 billion in 2025 and is expected to reach USD 35.66 billion by 2034, growing at a compound annual growth rate (CAGR) of about 33.91% from 2025 to 2034.

The United States Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market size is projected at USD 0.79433 Billion in 2025, the Europe Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market size is projected at USD 0.61667 Billion in 2025, and the China Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market size is projected at USD 0.83527 Billion in 2025.

Semiconductors that are made up of Gallium Nitride (GaN) and Silicon Carbide (SiC) are considered highly efficient, because Silicon carbide and gallium nitride are considered to the best and leading-edge materials for the production of power semiconductors. These substances have several advantages over the normal semiconductor materials.

These semiconductors have several applications and are used in various sectors like consumer electronics, railways, ups power supply, and, new energy grid connection. This is considered as the latest trend in the market.

Power semiconductors are used in modern electronics. Silicon carbide and gallium nitride are considered very suitable for the manufacturing of semiconductors. These are considered as the factors driving the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market growth.

KEY FINDINGS

COVID-19 IMPACT

Decline in Value of Semiconductor Industry Reduced Market Growth

The pandemic of COVID-19 created a disastrous situation to all the markets across the world. The demand for products declined completely, and there was a drastic change in the preference of consumers. This affected the market negatively.

Semiconductor market was one of the major victims of lockdowns, travel bans, and social distancing norms. After the outbreak of coronavirus, the demand for PC semiconductors reduced by almost four to eight percent. Semiconductor sector faced several difficulties because most of the companies delayed the upgradation of planned hardware, and also several long term migration projects. All of these factors brought down the market share of semiconductor sector negatively affected Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market share during the pandemic.

LATEST TRENDS

Usage of SiC and GaN Transistors and Diodes in Electric Vehicles to Increase Market Growth

Gallium Nitride (GaN) and Silicon Carbide (SiC) power semiconductors have many benefits and superior features. Transistors and electrodes that are made up of gallium nitride and silicon carbide are used in the manufacturing of electric vehicles. Electric vehicles have become the recent trend in the market.

Vehicles that run on diesel, petrol, and other non-renewable sources of energy are now getting outdated. Environmental awareness among people, and the initiatives taken up by government authorities to reduce the harmful emission and pollution is increasing the demand for electric vehicles. Increasing application of SiC and GaN power conductors in the manufacturing of electric vehicles across the globe is creating lucrative growth opportunities in the market. This is considered as the latest trend in the market.

• according to the U.S. Department of Energy — Wolfspeed’s SiC wafer capacity is estimated at 75,000–100,000 units/year, II-VI about 70,000 units/year, and SiCrystal about 60,000 units/year, pointing to concentrated wafer capacity and large, recent capacity expansions.

• Wolfspeed announced plans that increase SiC materials capacity by more than 10× and multiple companies are building 200 mm (8-inch) SiC/GaN lines or announcing 200 mm investments to support high-volume power device production.

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GALLIUM NITRIDE (GAN) AND SILICON CARBIDE (SIC) POWER SEMICONDUCTORS MARKET SEGMENTATION

By Type

The market can be divided on the basis of type into the following segments:

Silicon carbide power semiconductor, and, gallium nitride power semiconductor. The silicon carbide power semiconductor segment is anticipated to dominate the market during the forecast period.

By Application

Classification based on application into the following segment:

Consumer electronics, new energy grid connection, rail, industrial motor, ups power supply, new energy vehicles, and, other. The consumer electronics segment is predicted to dominate the market during the research period.

DRIVING FACTORS

Integration of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors in Modern Electronics to Drive Market Growth

Gallium Nitride (GaN) and Silicon Carbide (SiC) power semiconductors make up a large part of the modern electronics sector. Globalization, and rapid urbanization has increased the usage of electronic devices like computers, laptops, PCs, and smartphones among people. Semiconductors form an integral part in manufacturing most of these electronic devices. This has propelled the growth and development of the market.

Many new developments are being witnessed in the market recently. SiC semiconductors are now being drafted into thinner layers and their impurity concentration is made higher. This has increased the breakdown electric field strength that is used for configuring power devices that operate at a very high voltage. All of these factors are driving the market share.

• government-backed semiconductor programs and grants have supported multi-billion dollar facility projects — for example, a news-reported deal referenced a $225 million preliminary U.S. grant tied to a $1.9 billion SiC production investment for Bosch (this illustrates the scale of public subsidies mobilized to secure SiC capacity).

• companies are investing in integrated SiC production sites (substrate → epi → device). STMicroelectronics’ announcement of a fully integrated Catania SiC campus and related supply agreements (and commitments to increase internal substrate sourcing to ~40%) are concrete examples.

Several Benefits Provided by Power Conductors to Propel Market Growth

Gallium Nitride (GaN) and Silicon Carbide (SiC) power Semiconductors have an upper hand compared to other conductors because gallium nitride and silicon carbide are considered to be the most suitable material for conductors. They also provide several benefits, which will further propel the market growth.

These power conductors have higher voltage operation, greater switching frequencies, higher band gap, and wide range of temperatures. Gallium nitride present in these conductors will contribute in reducing the cost of energy consumed. This compound is highly efficient. The heat that is expended will be very less in turn decreasing the cost incurred. Silicon carbide enables the conductor to operate at higher power densities. All of these factors are increasing Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market share.

RESTRAINING FACTORS

Unfavorable Features of Silicon Carbide and Gallium Nitride to Decrease Market Growth

Gallium nitride and silicon carbide have certain features that are not suitable for the manufacturing of semiconductors. Silicon has a lower band gap because of which it cannot be used for higher power applications. Silicon is also not very efficient in supporting high voltage designs.

Gallium has a low thermal conductivity compared to other substances. Using gallium is expensive. Maintaining cost effectiveness can become a major challenge while using gallium. Controlling defects while manufacturing can be another difficulty. All of these factors can bring down market growth.

• According to the U.S. Department of Energy — China produces over 90% of the world’s gallium, and gallium is on critical-materials lists, meaning GaN scaling for high-voltage bulk GaN would raise material-supply risks.

• Several suppliers have publicly adjusted targets due to weaker EV demand; e.g., one supplier publicly delayed targets by 2 years citing softer SiC demand trends — demonstrating how end-market swings slow factory ramp timing.

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GALLIUM NITRIDE (GAN) AND SILICON CARBIDE (SIC) POWER SEMICONDUCTORS MARKET REGIONAL INSIGHTS

North America to Dominate Market Share in Upcoming Years

North America is a region that has witnessed a lot of developments in the semiconductor market share. This region is predicted to dominate the market throughout the forecast period. Many reasons have contributed in the growth of the market in this region which include higher investments on research about the usage of gallium nitride and silicon carbide in the manufacturing of semiconductors.

Also, the increasing demand for electric vehicles among people in this region is increasing the scope of market. Information technology is a developing sector in North America. This has increased the use of electronic devices. Semiconductors are an integral part of both the electric vehicle and electronic devices market.

KEY INDUSTRY PLAYERS

Leading Players adopt Acquisition Strategies to Stay Competitive

Several players in the market are using acquisition strategies to build their business portfolio and strengthen their market position. In addition, partnerships and collaborations are among the common strategies adopted by companies. Key market players are making R&D investments to bring advanced technologies and solutions to the market.

• CREE (Wolfspeed) — Wolfspeed has announced materials capacity expansion of >10× and has driven SiC wafer/epi investments including plans for 200 mm capability; the U.S. DOE identifies Wolfspeed with an estimated 75,000–100,000 units/year substrate capacity.

• STMicroelectronics — building an integrated Catania SiC campus to cover substrate → epi → device → module capabilities (publicly described as a fully integrated SiC capability to serve automotive/industrial customers), and has announced plans to raise internal substrate sourcing to roughly 40%.

List of Top Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Companies

• CREE (Wolfspeed)
• ON Semiconductor
• Roma Semiconductor Group
• Mitsubishi Electric
• Tyco Tianrun Semiconductor Technology (Beijing) Co Ltd
• Fuji Electric
• STMicroelectronics
• Littelfuse
• Shenzhen Basic Semiconductor Co Ltd

REPORT COVERAGE

The report provides an insight into the industry from both the demand and supply sides. Further, it also gives information on the impact of COVID-19 on the market, the driving and the restraining factors along with the regional insights. Market dynamic forces during the forecast period have also been discussed for the better understanding of the market situations. The top industrial players along with the region that dominates the market has also been given for the readers to know.