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IGBT and Super Junction MOSFET Market Report Overview
The global IGBT and super junction MOSFET market size was USD 6716 million in 2020 and market is projected to touch USD 14144.5 million by 2032 at CAGR 6.4% during the forecast period.
The increasing adoption of electric vehicles is a major driver for the demand for IGBT and super junction MOSFETs, as these semiconductor components play a crucial role in controlling inverter systems and managing battery charging processes in EV powertrains. The rapid expansion of the electric vehicle market, fueled by concerns about climate change and air pollution, is generating substantial demand for these essential power semiconductors. Additionally, the market is influenced by a focus on energy efficiency in electronic solutions, with IGBT and super junction MOSFETs demonstrating superior efficiency compared to traditional power transistors.
COVID-19 Impact: Demand Declined Due to Decreased Production in the Automotive Sector
The COVID-19 pandemic has been unprecedented and staggering, with the market experiencing lower-than-anticipated demand across all regions compared to pre-pandemic levels. The sudden market growth reflected by the rise in CAGR is attributable to the market’s growth and demand returning to pre-pandemic levels.
The landscape of the IGBT and super junction MOSFET market bore the brunt of the COVID-19 pandemic, witnessing significant challenges. Supply chain disruptions, triggered by widespread lockdowns and restrictions, dealt a blow to production and transportation, leading to shortages and notable price hikes. Concurrently, certain sectors, most notably automotive and industrial, grappled with shutdowns and reduced production levels, translating to a palpable decline in demand for IGBTs and MOSFETs crucial to these applications. The intricate interplay of these factors underscored the far-reaching impact of the pandemic on the market dynamics.
Latest Trends
"Integration of Driver Circuits and Gate Drivers to Foster the Development of Compact and High-Performance Power Electronics"
The latest trend in the IGBT and super junction MOSFET market centers around the integration of driver circuits, gate drivers, and additional components directly into the modules, resulting in ultra-compact power modules. This innovation has significantly reduced the size and weight of these modules, fostering the development of compact and high-performance power electronics. Particularly noteworthy is the application of these advancements in the creation of solutions for drones, wearable devices, and portable charging solutions. However, the densification of components necessitates advanced thermal management techniques, with microchannel cooling emerging as a critical method to ensure the efficient operation of these densely packed modules. This trend underscores the industry's commitment to pushing the boundaries of miniaturization while addressing the challenges associated with heat dissipation in compact electronic systems.
IGBT and Super Junction MOSFET Market Segmentation
By Type
Based on type, the global market can be categorized into high voltage and low voltage.
- High voltage segment: In the high voltage segment, IGBTs and super junction MOSFETs cater to applications requiring robust power handling capabilities. This segment is crucial for industries and systems demanding elevated voltage thresholds, such as power transmission, electric vehicles, and high-performance industrial machinery.
- Low voltage segment: The low voltage segment encompasses applications where power requirements operate within lower voltage ranges. IGBTs and super junction MOSFETs in this category find utility in consumer electronics, smaller-scale industrial applications, and portable electronic devices.
By Application
Based on application, the global market can be categorized into household appliances, rail transport, new energy, military and aerospace, medical equipment, and others.
- Household appliances: The application of IGBT and super junction MOSFET technology in household appliances involves enhancing the efficiency of devices like refrigerators, air conditioners, and washing machines.
- Rail transport: In the rail transport sector, IGBTs and MOSFETs play a critical role in traction inverters and auxiliary power systems. Their high power density and efficiency contribute to the electrification of trains, making them more energy-efficient.
- New energy: IGBTs and super junction MOSFETs are instrumental in the field of new energy, particularly in renewable energy systems such as solar inverters and wind turbines.
- Military and aerospace: The military and aerospace segment utilizes IGBTs and MOSFETs for various applications, including power supplies, radar systems, and electronic warfare equipment. Their reliability and high-performance characteristics make them crucial in ensuring the functionality and efficiency of advanced military and aerospace technologies.
- Medical equipment: IGBTs and super junction MOSFETs find applications in medical equipment, contributing to the efficiency and precision of devices such as imaging systems, surgical equipment, and power supplies for medical instruments.
Driving Factors
"Surge in Electric Vehicle (EV) Adoption to Elevate Market Expansion"
The increasing adoption of electric vehicles (EVs) stems from growing concerns regarding climate change and air pollution. In the EV powertrain, the pivotal role played by insulated gate bipolar transistors (IGBTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) cannot be overstated. These semiconductor components control inverter systems and efficiently manage battery charging processes. The swift expansion of the EV market is propelling a substantial demand for these essential power semiconductors.
"Focus on Energy Efficiency to Drive Market Growth"
The escalating cost of energy is steering the market towards more energy-efficient electronic solutions. Insulated gate bipolar transistors (IGBTs) and super junction MOSFETs stand out for their superior efficiency when compared to traditional power transistors. This heightened efficiency not only results in lower energy consumption but also contributes to a reduced carbon footprint. Applications such as solar inverters, wind turbines, and industrial motor drives benefit significantly from the energy-efficient characteristics of these semiconductor components.
Restraining Factor
"Technical Challenges to Hinder Market Enhancement"
One significant restraining factor for the IGBT and super junction MOSFET market is the array of technical challenges involved in their design. Striking a delicate balance between efficiency, switching speed, and on-resistance poses a notable challenge. Designers face the complex task of optimizing these semiconductor components, navigating trade-offs to achieve the most effective performance. The intricate nature of these technical challenges can impact the development and deployment of these semiconductors, potentially limiting IGBT and super junction MOSFET market growth.
IGBT and Super Junction MOSFET Market Regional Insights
"Asia Pacific to Lead the Global Market Due to Region’s Burgeoning Industrial and EV Sectors"
The market is primarily segregated into Europe, North America, Asia Pacific, Latin America, and the Middle East and Africa.
Asia Pacific holds the largest IGBT and super junction MOSFET market share. Burgeoning industrial and EV sectors, government initiatives promoting tech advancement, and a strong consumer electronics base all contribute to its dominance. This powerhouse region continues to set the pace for power semiconductor innovation and consumption, leaving all other contenders trailing in its wake.
Key Industry Players
"Key Players Focus on Partnerships to Gain a Competitive Advantage"
Prominent market players are making collaborative efforts by partnering with other companies to stay ahead of the competition. Many companies are also investing in new product launches to expand their product portfolio. Mergers and acquisitions are also among the key strategies used by players to expand their product portfolios.
LIST OF TOP IGBT AND SUPER JUNCTION MOSFET COMPANIES
- ROHM (Japan)
- Fairchild Semiconductor (U.S.)
- STMicroelectronics (Switzerland)
- Toshiba (Japan)
- Infineon (Germany)
- Semikron (Germany)
- Mitsubishi (Japan)
- Fuji (Japan)
- ABB (Switzerland)
- Silvermicro (U.S.)
- Starpower Semiconductor (Taiwan)
- MACMICST (Malaysia)
- Weihai Singa (China)
- Hongfa (China)
- Alpha & Omega Semiconductor (U.S.)
- Vishay (U.S.)
- Sanyo Electric (Japan)
- NXP Semiconductors (Netherlands)
- ON Semiconductor (U.S.)
- Dynex Semiconductor (Canada)
- Hitachi (Japan)
INDUSTRIAL DEVELOPMENT
October 2023: Infineon Technologies unveils the industry's first 1200V enhanced trench insulated gate bipolar transistor (E-Trench IGBT) with the lowest on-state resistance for its voltage class. This breakthrough promises increased efficiency and reduced power losses in industrial applications.
Report Coverage
The study encompasses a comprehensive SWOT analysis and provides insights into future developments within the market. It examines various factors that contribute to the growth of the market, exploring a wide range of market categories and potential applications that may impact its trajectory in the coming years. The analysis takes into account both current trends and historical turning points, providing a holistic understanding of the market's components and identifying potential areas for growth.
The research report delves into market segmentation, utilizing both qualitative and quantitative research methods to provide a thorough analysis. It also evaluates the impact of financial and strategic perspectives on the market. Furthermore, the report presents national and regional assessments, considering the dominant forces of supply and demand that influence market growth. The competitive landscape is meticulously detailed, including market shares of significant competitors. The report incorporates novel research methodologies and player strategies tailored for the anticipated timeframe. Overall, it offers valuable and comprehensive insights into the market dynamics in a formal and easily understandable manner.
REPORT COVERAGE | DETAILS |
---|---|
Market Size Value In |
US$ 6716 Million in 2020 |
Market Size Value By |
US$ 14144.5 Million by 2032 |
Growth Rate |
CAGR of 6.4% from 2020 to 2032 |
Forecast Period |
2024-2032 |
Base Year |
2023 |
Historical Data Available |
Yes |
Regional Scope |
Global |
Segments Covered |
Types and Application |
Frequently Asked Questions
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What value is the global IGBT and super junction MOSFET market expected to touch by 2032?
The global IGBT and super junction MOSFET market is expected to reach USD 14144.5 million by 2032.
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What CAGR is the IGBT and super junction MOSFET market expected to exhibit by 2032?
The IGBT and super junction MOSFET market is expected to exhibit a CAGR of 6.4% by 2032.
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What are the driving factors of the market?
The market is driven by the surge in electric vehicle adoption and a focus on energy efficiency in electronic solutions.
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What are the key market segments of the IGBT and super junction MOSFET market?
The key market segments include types such as high voltage and low voltage, as well as applications such as household appliances, rail transport, new energy, military and aerospace, medical equipment, and others.